3/4=2; 13/14=3; 24/25=4; 42=5; 52=6; 65=7; 79=8 von: Crystal growth
9=1 von: Crystal growth and epitaxy from the vapour phase
17=2; 31=3; 45=4; 56,2=5; 70=6 von: Vapour growth and epitaxy
48,4=2 von: European crystal growth
55,1=1; 68,1=2; 77,1-3=3; 93,1-4=4 von: Metalorganic vapor phase epitaxy
59=1982; 72=2; 86=3 von: II-VI compounds
64,1=2; 83,2=3 von: Materials aspects of indium phosphide
70=6; 85,1/2=7 von: American crystal growth
75,1=1; 89,1=2 von: Purification of materials for crystal growth and glass processing
81=4; 95=5 von: Molecular beam epitaxy
82,1/2=1 von: Shaped crystal growth
105=2 von: Chemical beam epitaxy and related growth techniques