797726-8  

Journal of vacuum science and technology : JVST ; an AVS journal / publ. by the Society through the American Institute of Physics

B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena

American Vacuum Society 

New York, NY : Inst.

2.Ser. 1.1983 -

Hauptsacht. bis 28.2010,1: Journal of vacuum science & technology

2. Zusatz anfangs: the official journal of the AVS

Sachl. Benennung bis 8.1990: Microelectronics processing and phenomena

Sachl. Benennung 9.1991 - 20.2002: Microelectronics and nanometer structures

Sachl. Benennung 21.2003 - 28.2010,1: An international journal devoted to microelectronics and nanometer structures

Abkürzungstitel: JVTBD9

Abkürzungstitel: J. Vac. Sci. Technol. B

1. Zusatz ab 2.Ser. 12.1994

Vorg.:  Journal of vacuum science & technology 

Erscheint auch als Online-Ausgabe, 1983-1990:  [Journal of vacuum science & technology / B]  (ISSN: 2327-9877) 

Erscheint auch als Online-Ausgabe, 1991-2010:  Journal of vacuum science & technology. B, Microelectronics and nanometer structures  (ISSN: 1520-8567) 

Erscheint auch als Online-Ausgabe, 2011-:  Journal of vacuum science & technology. B, Nanotechnology & microelectronics  (ISSN: 2166-2754) 

Erscheint auch als CD-ROM-Ausgabe:  [Journal of vacuum science & technology / A & B] 

In 1,2=4; in 2,2=5; in 4,1=6; in 5,3=7; in 6,2=8; in 7,2=9 von:  Molecular Beam Epitaxy Workshop: Proceedings of the ... Molecular Beam Epitaxy Workshop 

In 1,4=1983; in 3,1=1984; in 4,1=29; in 5,1=30; in 6,1=31; in 6,6=32; in 7,6=33 von:  International Symposium on Electron, Ion, and Photon Beams: Proceedings of the ... International Symposium on Electron, Ion, and Photon Beams  (ISSN: 1063-9586) 

In 2,4=14; in 4,6=16 von:  Symposium on Coatings for Large Scale Metallurgical, Optical, and Electronic Applications: Proceedings of the annual Symposium of the Greater New York Chapter of the AVS on Coatings for Large-Scale Metallurgical, Optical, and Electronic Applications 

In 3,2=3 von:  International Conference on Molecular Beam Epitaxy: Proceedings of the ... International Conference on Molecular Beam Epitaxy 

1,3=10; in 2,3=11; in 3,4=12; in 4,4=13; in 5,4=14; in 6,4=15; in 7,4=16; in 8,4=18 von:  Conference on the Physics and Chemistry of Semiconductor Interfaces: Proceedings of the ... annual Conference on the Physics and Chemistry of Semiconductor Interfaces  (ISSN: 1063-8997) 

In 2,4=2 von:  Workshop on Refractory Metal Silicides for VLSI: Proceedings of the Workshop on Refractory Metal Silicides for VLSI 

In 3,6=3; in 4,6=4; in 5,6=5 von:  Workshop on Refractory Metals and Silicides for VLSI: Proceedings of the Workshop on Refractory Metals and Silicides for VLSI 

In 3,5=1; in 5,5=2; in 7,5=3 von:  Topical Meeting on the Microphysics of Surfaces, Beams and Adsorbates: Proceedings of the ... Topical Meeting on the Microphysics of Surfaces, Beams and Adsorbates 

6,6=6 von:  Workshop on Metals, Dielectrics, and Interfaces for VLSI: Proceedings of the Workshop on Metals, Dielectrics, and Interfaces for VLSI 

1,2=1 von:  Modulated semiconductor structures 

ISSN: 2166-2746; 1071-1023; 0734-211X

OCLC-Nr.: 263603465

JVTBD9

DDC-Sachgruppen der ZDB: 530 Physik 

Weitere Klassifikation(en):
Regensburger Verbundklassifikation (rvk): UA 1000

Zeitschrift

Englisch 

Vereinigte Staaten, USA, United States 

Druckausgabe

014416840

27-08-25